PART |
Description |
Maker |
ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V. 意法半导
|
VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω,N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS(击穿电40伏,10Ω沟道增强型垂直的DMOS结构场效应管 N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??) N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp. ELAN Microelctronics Corp .
|
STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
|
STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管 From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V. ST Microelectronics
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APM9953KC-TU APM9953KC-TUL APM9953KC-TR APM9953KC- |
Dual P-Channel Enhancement Mode MOSFET 双P沟道增强型MOS Dual P-Channel Enhancement Mode MOSFET 3 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|